silicon epitaxial npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9104 issue 1 page 1 of 3 2N5154N1B hermetic ceramic surface mount smd0.5 package high reliability and space screening options availabl e absolute maximum ratings (t a = 25c unless otherwise stated) v cbo collector ? base voltage (i e = 0) 100v v ceo collector ? emitter voltage (i b = 0) 80v v ebo emitter ? base voltage 5.5v i c continuous collector current 2a i cm peak collector current (1) 10a p d total power dissipation at t c = 25c 70w derate above 25c 400 mw/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters min. typ. max. units r jc thermal resistance, junction to case (t c = 25c) 2.5 c/w (1) this value applies for pw 8.3ms, duty cycle 1% .
silicon epitaxial npn transistor 2N5154N1B semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9104 issue 1 page 2 of 3 electrical characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units v (br)ceo (2) collector-emitter breakdown voltage i c = 100ma 80 v v ce = 60v v be = 0 1.0 m a i ces collector cut-off current v ce = 100v v be = 0 1.0 ma v ce = 60v v be = -2v i cex collector cut-off current t c = 150c 25 i ceo collector cut-off current v ce = 40v i b = 0 50 v eb = 4v i c = 0 1.0 m a i ebo emitter cut-off current v eb = 5.5v i c = 0 1.0 ma i c = 50ma v ce = 5v 50 i c = 2.5a v ce = 5v 70 200 t c = -55c 25 h fe (2) forward-current transfer ratio i c = 5a v ce = 5v 40 - v be (2) base-emitter voltage i c = 2.5 a v ce = 5v 1.45 i c = 2.5a i b = 250ma 1.45 v be(sat) (2) collector-emitter saturation voltage i c = 5a i b = 500ma 2.2 i c = 2.5a i b = 250ma 0.75 v ce(sat) (2) base-emitter saturation voltage i c = 5a i b = 500ma 1.5 v dynamic characteristics i c = 500ma v ce = 5v ? h fe ? magnitude of common- emitter, small-signal short- circuit, forward-current transfer ratio f = 20mhz 1.2 - i c = 100ma v ce = 5v h fe small-signal current gain f = 1.0 khz 50 - v cb = 10v i e = 0 c obo output capacitance f = 1.0mhz 250 pf t on turn-on time v cc = 30v i c = 5a 0.5 t s storage time i b1 = 500ma i b2 = - i b1 1.4 t f fall time r l = 6 w 0.5 t off turn-off time 1.5 m s notes notes notes notes (2) pulse width 300us, 2%
silicon epitaxial npn transistor 2N5154N1B semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 9104 issue 1 page 3 of 3 mechanical data dimensions in mm (inches) 2 1 3 2.41 (0.095) (0.030) min. 3.05 (0.120) 5.72 (.225) 0.127 (0.005) (0.296) 10.16 (0.400) 0.76 (0.030) min. 3.175 (0.125) max. 0.50 (0.020) max. 7.54 0.76 2.41 (0.095) 0.127 (0.005) (0.286) 7.26 16 plcs 0.50(0.020) 0.127 (0.005) smd smd smd smd0.5 0.50.5 0.5 ( ( ( (to toto to- -- -276a 276a 276a 276aa aa a) )) ) pad 1 - base pad 2 ? collector pad 3 - emitter
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